POWER AMPLIFIER BASED ON COMPOSITE INJECTION-VOLTAIC TRANSISTORS

Authors

Nodira Batirdjanovna Alimova, Tashkent State Technical University. Address: 2 Universitetskaya st., 100095, Tashkent city, Republic of Uzbekistan. E-mail: nali71@yandex.ru, Phone: +998 90-30-44-71.Follow

Abstract

The problem of high-current radio engineering devices is related to the fact that the use of high-power transistors and other semiconductor devices is limited by such a phenomenon as a secondary breakdown, in which there is a sharp decrease in the voltage on the device with simultaneous internal current lacing, and the device fails. To solve the problem of secondary breakdown, schemes have been proposed that operate stably at reverse voltage values 4-5 times higher than usual and at power dissipation 2-3 times higher than the maximum allowable power for an individual device. The problem is proposed to be solved by using composite transistors. This is the most optimal way, since passive elements are not used.

The article proposes and investigates power amplifiers based on the use of composite bipolar transistors operating in the injection-voltaic mode. A method of active emitter self-stabilization of power amplifiers based on composite transistors with the same band gap is proposed and theoretically substantiated, which makes it possible to reduce the total coefficient of non-linear distortion and the instability of the quiescent current of power amplifiers depending on the supply voltage and temperature.

First Page

49

Last Page

56

References

1. Aripov, Kh.K., Bustanov, Kh.Kh., Nasyrkhodzhaev, F.R. (2003). Poluprovodnikovyye pribory na osnove inzhektsionno-vol'taicheskogo effekta [Semiconductor devices based on the injection-voltaic effect]. Collection of proceedings of the scientific conference "Fundamental and applied problems of physics", Research and production association "Physics-Sun" Academy of Sciences of the Republic of Uzbekistan named after. S.A.Azimova. Tashkent, 260-262. (in Russian).
2. Alimova, N.B. (2008). Elementnaya baza na osnove inzhektsionno – vol'taicheskogo effekta [Element base based on the injection-voltaic effect]. Bulletin of TUIT. 4, 82-84. (in Russian).
3. Aripov, Kh.K., Alimova, N.B., Bustanov, Kh.Kh., Obedkov, E.V., Toshmatov, Sh.T. (2009). Injection-voltaic effect based on multilayer semiconductor structures. Applied Solar Energy. 1, 15-21.
4. Alimova, N.B. (2009). Issledovaniye inzhektsionno-vol'taicheskogo effekta v mnogosloynykh p-n strukturakh [Study of the injection-voltaic effect in multilayer p-n structures]. Bulletin of TUIT. 4, 84-85. (in Russian).
5. Alimova, N.B. (2009). Issledovaniye vozmozhnosti usileniya signala bipolyarnogo tranzistora v inzhektsionno-vol'taicheskom rezhime [Investigation of the possibility of amplifying the signal of a bipolar transistor in the injection-voltaic mode]. Bulletin of TUIT. 1, 101-105. (in Russian).
6. Alimova, N.B. (2009). Svyaz' foto-vol'taicheskogo effekta v solnechnykh elementakh s inzhektsionno-vol'taicheskim effektom v mnogosloynykh poluprovodnikovykh strukturakh [Relationship between the photovoltaic effect in solar cells and the injection-voltaic effect in multilayer semiconductor structures]. Bulletin of AIES. 3, 43-48. (in Russian).
7. Aripov, Kh.K., Toshmatov, Sh.T. (2016). Elementnaya baza na osnove inzhektsionno-vol'taicheskogo effekta [Element base based on the injection-voltaic effect]. X international branch scientific and technical conference, Proceedings. MTUCI, 165-166. (in Russian).
8. Kardashev, G. (2004). Komp'yuternoye skhemotekhnicheskoye modelirovaniye electron-nykh ustroystv [Computer circuit modeling of electronic devices]. Circuitry. 3, 18-19. (in Russian).
9. Aripov, Kh.K., Bustanov, Kh.Kh., Kasimov, S.S., Yarmukhamedov, A.A. (2001). Sostavnoy bipolyarnyy tranzistor [Composite bipolar transistor]. Provisional patent of the Republic of Uzbekistan № IDP 04949, 24.09.2001. Published Bull., 5. 31.10.2001. (in Russian).
10. Aripov, Kh.K., Bustanov, Kh.Kh., Kasimov, S.S., Yarmukhamedov, A.A. (2001). Sostavnoy bipolyarnyy tranzistor [Composite bipolar transistor]. Provisional patent of the Republic of Uzbekistan № IDP 04950, 24.09.2001. Published Bull., 5. 31.10.2001. (in Russian).
11. Bustanov, Kh.Kh., Yarmukhamedov, A.A. (2002). Issledovaniye sostavnogo bipolyarnogo tranzistora po skheme Darlingtona [The study of a composite bipolar transistor according to the Darlington circuit]. Problems of Informatics and Energy. 5, 30-34. (in Russian).
12. Yarmukhamedov, A.A. (2005). Matematicheskaya model' sostavnogo inzhektsionno – vol'taicheskogo tranzistora po skheme Darlingtona [Mathematical model of a composite injection-voltaic transistor according to the Darlington scheme]. Collection of proceedings of the epublican scientific and technical conference of graduate students, masters and bachelors “Information and switching technologies”. 88-89. (in Russian).
13. Aripov, Kh.K., Alimova, N.B., Aripova, Z.Kh., Bustanov, Kh.Kh., Mavlanov, A.R., Obedkov, E.V., Toshmatov, Sh.T. (2013). Usilitel' moshchnosti [Power amplifier]. Patent of the Republic of Uzbekistan № IAP 04640, 29.12.2012. Published Bull, 1. 31.01.2013. (in Russian).

Recommended Citation

Alimova, Nodira Batirdjanovna (2023) "POWER AMPLIFIER BASED ON COMPOSITE INJECTION-VOLTAIC TRANSISTORS," Chemical Technology, Control and Management: Vol. 2023: Iss. 2, Article 7.
DOI: https://doi.org/10.59048/2181-1105.1454