RESEARCH OF LOGIC ELEMENTS BASED ON COMPLEMENTARY BIPOLAR TRANSISTORS

Authors

• Nodira Batirdjanovna Alimova, Tashkent State Technical University. Address: 2 Universitetskaya st., 100095, Tashkent city, Republic of Uzbekistan. E-mail: nali71@gmail.com;Follow
• Nilufar Baxtiyorovna Gulyamova, Tashkent State Technical University. Address: 2 Universitetskaya st., 100095, Tashkent city, Republic of Uzbekistan.

Abstract

Important parameters for any type of inverter – a NOT logic gate – are the power consumption during switching and the supply voltage. The proposed connection of complementary (two different types) bipolar transistors reduces the current consumption and supply voltage by simultaneously using the cutoff and saturation modes of the bipolar transistors. It has been theoretically and experimentally established that an inverter using complementary bipolar transistors operates at low supply voltages, approximately 0.7 V. Power consumption is virtually independent of the inverter's static state. A method for calculating the transfer characteristic of an inverter using complementary bipolar transistors is developed, and experimental results are presented.

This article explores the possibility of using the injection-voltaic operating mode of a bipolar transistor to create basic digital circuits such as NOT, OR-NOT, AND-NOT, and others. Furthermore, the inverter can find wide applications in telemetry systems, automation, industrial and automotive electronics, which can be powered by solar cells.

First Page

42

Last Page

48

References

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Recommended Citation

Alimova, Nodira Batirdjanovna and Gulyamova, Nilufar Baxtiyorovna (2026) "RESEARCH OF LOGIC ELEMENTS BASED ON COMPLEMENTARY BIPOLAR TRANSISTORS," Chemical Technology, Control and Management: Vol. 2026: Iss. 1, Article 5.
DOI: https://doi.org/10.59048/2181-1105.1736