Theoretical research and computer simulation of composite transistors made of a semiconductor material with the same of the forbidden band.

Authors

N.B Alimova, Candidate of Technical Sciences, Associate Professor of the Department "Mechatronics and Robotics" Tashkent State Technical University. Тel.: +99890-320-44-71 (м),Follow
A.A Yarmukhamedov, Candidate of Technical Sciences, Associate Professor, Department of Radio Engineering Devices and Systems, Tashkent State Technical University. Теl.: +99897-448-06-34 (м).

Abstract

Presents the results of theoretical research and computer simulation of composite transistors made of a semiconductor material with the same of the forbidden band. To study the volt-ampere characteristics of such composite transistors, an interactive computer simulation program was developed in the programming environment of Delphi-6. It is shown that the proposed transistors make it possible to improve manufacturability when it is manufactured industrially. The proposed composite transistors are designed for the final cascades of power amplifiers, radio transmitting devices.

First Page

90

Last Page

94

References

1. H.Keith. Sueker. Power Electronics Design: A Practitioner's Guide. Newnes .1.2 MB PDF.

2. N.B.Alimova, M.K.Aripdjanov, U.Kh.Aripova, Sh.T.Atahanov, J.T.Makhsudov Programms for semiconductor tehnological prosesses-instruments-circuite // World Conference on Intelligent Systems for Industrial Avtomation. -Tashkent, 2000. P. 232-235.

3. N.B.Alimova, H.K.Aripov, I.R.Faziljanov, A.A.YArmuhamedov “Programma rascheta VAH bipolyarnogo dreyfovogo tranzistora” [Program for calculating the VAH of a bipolar drift transistor], Svidetel'stvo Respubliki Uzbekistan, no. DGU 02064, 29 Sep., 2010.

4. N.B.Alimova, H.K.Aripov, I.R.Faziljanov, A.A.YArmuhamedov, “Programma rascheta VAH gomosostavnogo tranzistora” [Program for calculating the VAH of a homocomposite transistor], Svidetel'stvo Respubliki Uzbekistan no. DGU 02380, 15 Dec., 2011.

Recommended Citation

Alimova, N.B and Yarmukhamedov, A.A (2018) "Theoretical research and computer simulation of composite transistors made of a semiconductor material with the same of the forbidden band.," Chemical Technology, Control and Management: Vol. 2018: Iss. 1, Article 16.
DOI: https://doi.org/10.34920/2018.1-2.90-94