Theoretical research and computer simulation of composite transistors made of a semiconductor material with different width of forbidden zone

Authors

N.B Alimova, Candidate of Technical Sciences, Associate Professor, Department of Mechatronics and Robotics, TSTU. Tel: + 99890-320-44-71 (m),Follow
A.A Yarmukhamedov, Candidate of Technical Sciences, Associate Professor of the Department of Radio Engineering Devices and Systems, TSTU. Tel .: + 99897-448-06-34 (m).

Abstract

The results of theoretical research and computer simulation of composite transistors made of a semiconductor material with different width of forbidden zone are presented in the article. To study the volt-ampere characteristics of such composite transistors, an interactive computer simulation program was developed in the programming environment of Delphi-6. It is shown that the proposed transistors make it possible to improve manufacturability when it is manufactured industrially. The proposed composite transistors are designed for output stages of power amplifiers, radio transmitting devices, electronic equipment for industrial and automotive electronics.

First Page

42

Last Page

46

References

1. Keith H.Sueker, Power Electronics Design: A Practitioner's Guide, Newnes.

2. N.B.Alimova, M.K.Aripdjanov, U.Kh.Aripova, Sh.T.Atahanov, J.T.Makhsudov “Programms for semiconductor tehnological prosesses-instruments-circuite”, World Conference on Intelligent Systems for Industrial Automation, 2000, pp. 232-235.

3. N.B.Alimova, H.K.Aripov, I.R.Faziljanov, A.A.YArmuhamedov, “Programma rascheta VAH bipolyarnogo dreyfovogo tranzistora” [Program for calculating the VAC of a bipolar drift transistor], Svidetel'stvo Respubliki Uzbekistan № DGU 02064, 29.09.2010.

4. N.B.Alimova, H.K.Aripov, I.R.Faziljanov, A.A.YArmuhamedov, “Programma rascheta VAH geterosostavnogo tranzistora” [The calculation program wah heterozostera transistor], Svidetel'stvo Respubliki Uzbekistan № DGU 01980, 01.07.2010.

Recommended Citation

Alimova, N.B and Yarmukhamedov, A.A (2018) "Theoretical research and computer simulation of composite transistors made of a semiconductor material with different width of forbidden zone," Chemical Technology, Control and Management: Vol. 2018: Iss. 2, Article 8.
DOI: https://doi.org/10.34920/2018.3.42-46